FEE-CTU in Prague & ABB Semiconductors AG Diodes With Improved Reverse Recovery by Combined Irradiation
نویسندگان
چکیده
Reverse recovery of a P-i-N power diode at high dI/dt is subject to two detrimental effects, i.e. avalanche injection and snap-off. Both the effects can be reduced by a proper application of lifetime engineering. For this purpose, combined proton and electron irradiation was found to be the method of choice. For exact design of irradiation parameters, the device simulation, taking into account the electronic structure of the relevant radiation defects, was used. The beneficial effect of the combined irradiation is presented for a 4.5kV/300A free-wheeling diode.
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